This is because the rate of the surface recombination of the sample is greater than the rate in the bulk; 因为在现在测试的样品中,在表面的载流子复合速率大于在体内的。
According to the formula, influences of GaN emission layer absorption coefficient μ hv, electron surface escape probability P, electron diffusion length LD, GaN emission layer thickness Te, and the recombination rate Sv of the back interface on quantum efficiency are analyzed. 根据公式,分析了GaN发射层吸收系数αhv、电子表面逸出几率P、电子扩散长度LD、GaN发射层厚度Te以及后界面复合速率Sv对量子效率的影响。